Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy
نویسندگان
چکیده
Self-assembled InGaN quantum dots (QDs) have been grown using metalorganic vapor-phase epitaxy (MOVPE), without using antisurfactant. Using 120 s annealing, InGaN QDs have been successfully formed with a circular base diameter of 40 nm and an average height of 4 nm, with QDs density of 4 10 cm . The InGaN QDs have peak photoluminescence (PL) wavelengths of 519 and 509 nm for samples without and with a GaN upper barrier, respectively. The full-width half-maximum (FWHM) of the PL spectra ranges from 56.6 up to 69.6 nm. These results demonstrates that high In-content InGaN QDs can be grown by MOVPE, and can potentially be utilized as the active media for light-emitting diodes (LEDs) and semiconductor laser diodes for green emission. r 2008 Elsevier B.V. All rights reserved. PACS: 68.37.Ps; 68.65.Hb; 73.61.Ey; 78.67. n; 81.16.Dn; 82.33.Ya; 85.60.Jb
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